sidac revision december 18, 2013 1 / 4 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. symbol parameter value units i tsm maximum surge on-state current non-repetitive one cycle peak value 50hz 8 a di t /dt critical rate-of-rise of on-state current 50 a i t on-state rms current 1 a t stg storage temperature range -40 to +125 oc t j operating junction temperature range -40 to +125 oc ? excellent capability of absorbing transient surge ? quick response to surge voltage (ns level) ? glass passivated junctions ? high voltage lcmp ignitors ? high-voltage lamp ignitors ? natural gas ignitors ? gas oil ignitors ? high-voltage power supplies ? xenon ignitors ? over voltage protector ? pulse generators ? fluorescent lighting ignitors hid lighting ignitors the sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on-state voltage. conduction continues until the current is interrupted or drops below the minimum holding current of the device.
6 l g d f 5 h y l v l r q ' h f h p e h u # 8 1 6 h p l f r q g x f w r u & r / w g 6 s h f l i l f d w l r q v d u h v x e m h f w w r f k d q j h z l w k r x w q r w l f h 3 o h d v h u h i h u w r z z z x q v h p l f r p w z i r u f x u u h q w l q i r u p d w l r q 9 , & x u y h 3 d u w 1 x p e h u 9 ' 5 0 # , ' 5 0 9 % 2 , % 2 9 7 # , 7 $ 5 6 , + % r g \ 0 d u n l q j 9 x $ 9 x $ 9 n k 0 9 s k 1 0 s k 1 2 s k 1 3 s k 1 4 s k 1 5 s k 1 8 s k 2 0 s k 2 2 s k 2 4 s k 2 6 s
sidac revision december 18, 2013 3 / 4 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. part number reel diameters (mm) reel(pcs) per carton (pcs) sod-123fl 178 3000 96000 refl ow condi tion lead C f re e a s s embly -tem pe rature min (t s(min) ) +150 c -tem pe rature max (t s(max) ) +200 c pre heat -ti me (min to max) (t s ) 60 - 180 seconds ave rage ramp up r ate ( liqu idu s temp t l ) to peak 3 c /second max t s( max) to t l - ramp-up r ate 3 c/second max - temperature (t l ) (li quidus) + 217 c refl ow - time ( min to max) (t s ) 60 -150 seconds peak tempe r at u r e (t p ) 260 +0/-5 c ti me within 5 c of act ual p eak t e m p erature (t p ) 8-15 s econd s ramp-down r a te 6 c/s econd max ti me 25 c to p e ak temperature (t p ) 8 minute s m a x do not ex ceed +260 c r a m p-do wn preheat c r i t i c a l z one t l t o t p t i m e t o pea k t em perature ( t 25 t o pea k ) t p t l t s (max) t s(min) 25 temperature r a m p-up time
sidac revision december 18, 2013 4 / 4 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. dimensions millimeters inches ref. min. a a1 b c d e f 0.90 0 0.70 0.10 1.50 2.36 2.50 sod-123fl g 4.19 max. 1.20 0.10 1.10 0.20 1.80 2.90 - - min. 0.035 0 0.028 0.004 0.059 0.098 0.093 0.165 max. 0.047 0.004 0.043 0.008 0.071 0.114 - - h l 3.40 0 0.95 0.134 0.037 l h e a1 a c g f 3.80 0.55 8 0 8 0.150 0.022
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